Currently leading in the HBM market critical for AI semiconductors, SK Hynix is in the phase of mass-producing HBM3 and targets the first half of this year for the introduction of HBM3E. The company's roadmap includes the mass production of HBM4 by 2026, with expectations for the HBM market to expand by 40% by 2025. Kim also touched upon the challenges and advancements in DRAM and NAND flash technology, noting the current production of 1b-level products and the development of the next-generation 1c. He pointed out the severe technological barriers expected below the 10-nanometer level, which are driving the industry towards new materials and structures. The state-of-the-art 1b circuit line width stands at the 12-nanometer level.
Samsung Electronics, another key player, has also been active in the HBM segment. Vice President Kim Jae-joon, from Samsung's Memory Business Division, reported during an earnings call that the HBM3E project is advancing as scheduled, with 8-layer sample products already in client hands. Samsung anticipates the commencement of mass production for HBM3E within the first half of this year and plans to start HBM4 sampling in 2025, targeting mass production in 2026. The company also aims to enhance its custom HBM offerings, tailored to meet specific customer requirements, including the integration of logic chips in the HBM packages. This strategy is aligned with the rising demand for customized HBM solutions in the generative AI sector, positioning Samsung to leverage its capabilities in foundry, system LSI, and advanced packaging to lead competitively in the market.
Source: Business Korea
