In a strategic collaboration with TSMC, SK Hynix signed a memorandum of understanding last month to work on the HBM base die, reinforcing their commitment to innovation in memory solutions. This partnership aims to leverage TSMC’s 7nm process technology for the base die components of future memory products. Further technological advancements are anticipated as SK Hynix intends to utilize a cutting-edge 1cnm process technology for its HBM4 memory. This is a progression from the current HBM3E memory, which is based on a 1bnm process. The company also disclosed that its 12-layer stacked HBM3E memory, employing MR-MUF bonding technology, will start sampling this month with mass production expected by the third quarter of this year. Plans are also in place for the mass production of 16-layer stacked versions, utilizing MR-RUF technology.

SK Hynix’s accelerated production schedule reflects a strategic response to the intensive memory requirements posed by next-generation AI processors. This move not only enhances the company's competitive edge in the high-performance memory market but also supports the broader AI industry's growth by ensuring the availability of advanced memory solutions.