Yongcheol Bae, Executive Vice President of Memory Product Planning at Samsung Electronics, highlighted the growing demand for higher capacity HBM from AI service providers and emphasized that the HBM3E 12H is engineered to meet this requirement, thereby reinforcing Samsung's commitment to technological innovation in the high-capacity HBM market. A key feature of the HBM3E 12H is the implementation of advanced thermal compression non-conductive film (TC NCF) technology, which enables the 12-layer DRAM to maintain the same physical height as its 8-layer counterparts, ensuring compatibility with existing HBM package specifications. This technology also addresses potential challenges associated with chip die warping by reducing the thickness of the NCF material, achieving an industry-leading inter-chip gap of seven micrometers (µm) and enhancing vertical density by more than 20% relative to the HBM3 8H.

The HBM3E 12H is anticipated to play a crucial role in the next generation of AI systems by providing higher performance and capacity, which will enable more efficient resource management and lower total cost of ownership for data centers. In AI applications, this memory solution is expected to significantly increase the speed of AI training and expand the capacity for handling simultaneous inference services.

Samsung has initiated the distribution of HBM3E 12H samples to its customers, with plans to commence mass production in the upcoming months. This move underscores Samsung's strategic positioning to address the evolving needs of the high-performance computing sector, particularly in the realm of artificial intelligence.