Micron Five-Year Roadmap Shows 24Gb 36Gbps GDDR7 in 2026

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Micron has introduced a comprehensive five-year plan for the development of advanced memory technologies aimed at improving server and gaming applications. A recent presentation included the announcement of new 128GB DDR5-8000 RDIMM memory modules, which utilize 32Gb monolithic DRAM integrated circuits primarily for server use. This release marks the beginning of a series of planned developments in memory technology.

The company's strategy includes the launch of HBM4E memory, an innovation that had not been previously disclosed. Additionally, for the gaming industry, Micron is preparing to launch 256GB DDR5-12800 memory modules based on MCR DIMM architecture. A roadmap released by Tom's Hardware traces the evolution of High-Bandwidth Memory (HBM) technology, noting significant progress in recent years.

In the near future, Micron expects to release 24GB 8-stack HBM3e memory in early 2024, with 36GB 12-stack modules following in 2025. The roadmap progresses to HBM4, aiming to introduce 12 and 16-hi stack configurations with 36GB to 48GB capacities. These stacks will not only enhance capacity but also improve bandwidth, increasing from HBM3e's 1.2 TB/s to 1.5 TB/s, which is anticipated to benefit the development of High-Performance Computing (HPC) accelerators between 2026 and 2027. By 2028, the plan is to launch HBM4E memory, with stack capacities of 48GB to 64GB and bandwidths reaching up to 2 TB/s.

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For the gaming industry, GDDR memory is expected to advance with the introduction of GDDR7 technology by the end of 2024, which is projected to achieve 32 Gbps bandwidth and bring new 24 Gb modules (3GB) into the market. This upgrade is expected to enable more complex memory configurations in consumer graphics cards. Subsequent iterations of GDDR7, offering 36 Gbps bandwidth, are set to further influence the gaming GPU market in the years 2027 and 2028.

Furthermore, Micron's plan details the introduction of MCRDIMM memory in 2025, which promises substantial memory capacities between 128GB and 256GB, alongside transfer speeds of 8800 MT/s. The subsequent period aims to further push bandwidth capabilities, with targets set to reach 12800 MT/s by approximately 2026/2027.

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