Review: Crucial DDR5 PRO Series 6000 MHz CL36 (64GB)

Memory (DDR4/DDR5) and Storage (SSD/NVMe) 369 Page 3 of 12 Published by

teaser

What are memory timings?

When it comes to memory timings, there are a few key factors to understand. One of the most important is latency, which refers to the amount of time it takes for a request to be processed and the data to be written or read from memory. In other words, latency is like the wait time between ordering a meal at a restaurant and receiving it. The lower the latency, the faster the data can be accessed, much like how a quick meal service is preferable. Latency - lower is better. 

P1013667

Say we notice on the packaging is this: 36-38-38-80 at 1.3 Volts for a memory kit. What do the numbers mean? Well, this refers to CAS-tRCD-tRP-tRAS CMD (respectively), and these values are measured in clock cycles.

 
[ DIMMA1: Crucial CP16G60C36U5B.M8D1 ]
 
Memory Module Properties:
Module Name  Crucial CP16G60C36U5B.M8D1
Serial Number  E85D8E38h (948854248)
Manufacture Date  Week 4 / 2024
Module Size  16 GB (32 banks)
Module Type  Unbuffered DIMM
Memory Type  DDR5 SDRAM
Memory Speed (EXPO)  DDR5-6000 (3000 MHz)
Memory Speed  DDR5-5600 (2800 MHz)
Module Width  64 bit
Module Voltage (EXPO)  1.35 V
Module Voltage (VDD)  1.1 V
Module Voltage (VDDQ)  1.1 V
Module Voltage (VPP)  1.8 V
Error Detection Method  None
DRAM Manufacturer  Micron
DRAM Stepping  44h
SDRAM Die Count  1
 
Memory Timings:
@ 3003 MHz (EXPO)  36-38-38-80 (CL-RCD-RP-RAS)
@ 2801 MHz  50-45-45-90 (CL-RCD-RP-RAS) / 135-827-449-365-85 (RC-RFC1-RFC2-RFCSB-WR)
@ 2801 MHz  46-45-45-90 (CL-RCD-RP-RAS) / 135-827-449-365-85 (RC-RFC1-RFC2-RFCSB-WR)
@ 2625 MHz  42-42-42-84 (CL-RCD-RP-RAS) / 126-775-420-342-79 (RC-RFC1-RFC2-RFCSB-WR)
@ 2500 MHz  40-40-40-80 (CL-RCD-RP-RAS) / 120-738-400-325-75 (RC-RFC1-RFC2-RFCSB-WR)
@ 2250 MHz  36-36-36-72 (CL-RCD-RP-RAS) / 108-664-360-293-68 (RC-RFC1-RFC2-RFCSB-WR)
@ 2000 MHz  32-32-32-64 (CL-RCD-RP-RAS) / 96-590-320-260-60 (RC-RFC1-RFC2-RFCSB-WR)
@ 1875 MHz  30-30-30-60 (CL-RCD-RP-RAS) / 90-554-300-244-57 (RC-RFC1-RFC2-RFCSB-WR)
@ 1750 MHz  28-28-28-56 (CL-RCD-RP-RAS) / 84-517-280-228-53 (RC-RFC1-RFC2-RFCSB-WR)
@ 1624 MHz  26-26-26-52 (CL-RCD-RP-RAS) / 78-480-260-212-49 (RC-RFC1-RFC2-RFCSB-WR)
@ 1374 MHz  22-22-22-44 (CL-RCD-RP-RAS) / 66-406-220-179-42 (RC-RFC1-RFC2-RFCSB-WR)
 
Extreme Memory Profile v3.0:
Profile Name  6000 CL36
Voltage (VDD)  0.00 V
Voltage (VDDQ)  2.100 V
Voltage (VPP)  0.00 V
Voltage (Memory Controller)  0.00 V
Recommended DIMMs Per Channel  1
Dynamic Memory Boost  Not Supported
Real-Time Memory Frequency Overclocking  Not Supported
@ 28 MHz  90-1-2-1 (CL-RCD-RP-RAS) / 1-30-216-1-2 (RC-RFC1-RFC2-RFCSB-WR)
@ 28 MHz  76-1-2-1 (CL-RCD-RP-RAS) / 1-30-216-1-2 (RC-RFC1-RFC2-RFCSB-WR)
@ 28 MHz  70-1-2-1 (CL-RCD-RP-RAS) / 1-30-216-1-2 (RC-RFC1-RFC2-RFCSB-WR)
@ 28 MHz  68-1-2-1 (CL-RCD-RP-RAS) / 1-30-216-1-2 (RC-RFC1-RFC2-RFCSB-WR)
@ 28 MHz  66-1-2-1 (CL-RCD-RP-RAS) / 1-30-216-1-2 (RC-RFC1-RFC2-RFCSB-WR)
@ 28 MHz  58-1-2-1 (CL-RCD-RP-RAS) / 1-30-216-1-2 (RC-RFC1-RFC2-RFCSB-WR)
@ 28 MHz  42-1-2-1 (CL-RCD-RP-RAS) / 1-30-216-1-2 (RC-RFC1-RFC2-RFCSB-WR)
@ 28 MHz  28-1-2-1 (CL-RCD-RP-RAS) / 1-30-216-1-2 (RC-RFC1-RFC2-RFCSB-WR)
@ 28 MHz  22-1-2-1 (CL-RCD-RP-RAS) / 1-30-216-1-2 (RC-RFC1-RFC2-RFCSB-WR)
@ 28 MHz  20-1-2-1 (CL-RCD-RP-RAS) / 1-30-216-1-2 (RC-RFC1-RFC2-RFCSB-WR)
 
Extreme Memory Profile v3.0:
Profile Name  5600 CL36
Memory Speed  DDR5-5600 (2800 MHz)
Voltage (VDD)  1.25 V
Voltage (VDDQ)  1.25 V
Voltage (VPP)  1.80 V
Voltage (Memory Controller)  3.155 V
Recommended DIMMs Per Channel  1
Dynamic Memory Boost  Not Supported
Real-Time Memory Frequency Overclocking  Not Supported
@ 2801 MHz  42-38-38-80 (CL-RCD-RP-RAS) / 118-827-449-365-85 (RC-RFC1-RFC2-RFCSB-WR)
@ 2801 MHz  40-38-38-80 (CL-RCD-RP-RAS) / 118-827-449-365-85 (RC-RFC1-RFC2-RFCSB-WR)
@ 2801 MHz  38-38-38-80 (CL-RCD-RP-RAS) / 118-827-449-365-85 (RC-RFC1-RFC2-RFCSB-WR)
@ 2801 MHz  36-38-38-80 (CL-RCD-RP-RAS) / 118-827-449-365-85 (RC-RFC1-RFC2-RFCSB-WR)
@ 2489 MHz  32-34-34-72 (CL-RCD-RP-RAS) / 105-735-399-324-75 (RC-RFC1-RFC2-RFCSB-WR)
@ 2334 MHz  30-32-32-67 (CL-RCD-RP-RAS) / 99-689-374-304-71 (RC-RFC1-RFC2-RFCSB-WR)
@ 2178 MHz  28-30-30-63 (CL-RCD-RP-RAS) / 92-643-349-284-66 (RC-RFC1-RFC2-RFCSB-WR)
@ 2023 MHz  26-28-28-58 (CL-RCD-RP-RAS) / 86-597-324-263-61 (RC-RFC1-RFC2-RFCSB-WR)
@ 1711 MHz  22-24-24-49 (CL-RCD-RP-RAS) / 73-505-274-223-52 (RC-RFC1-RFC2-RFCSB-WR)
 
EXtended Profiles for Overclocking v1.0:
Memory Speed  DDR5-6000 (3000 MHz)
Voltage (VDD)  1.35 V
Voltage (VDDQ)  1.35 V
Voltage (VPP)  1.80 V
Recommended DIMMs Per Channel  1
Memory Timings  36-38-38-80 (CL-RCD-RP-RAS) / 118-886-481-391-91 (RC-RFC1-RFC2-RFCSB-WR)
 
EXtended Profiles for Overclocking v1.0:
Memory Speed  DDR5-5600 (2800 MHz)
Voltage (VDD)  1.25 V
Voltage (VDDQ)  1.25 V
Voltage (VPP)  1.80 V
Recommended DIMMs Per Channel  1
Memory Timings  36-38-38-80 (CL-RCD-RP-RAS) / 118-827-449-365-85 (RC-RFC1-RFC2-RFCSB-WR)
 
Memory Module Features:
Asymmetrical Module  No
HeatSpreader  Not Present
 
Memory Module Manufacturer:
Company Name  Micron Technology, Inc.

 

CAS Latency 
Undoubtedly, one of the most essential timings is that of the CAS Latency and is also the one most people can actually understand. Since data is often accessed sequentially (same row), the CPU only needs to select the next column in the row to get the next piece of data. In other words, CAS Latency is the delay between the CAS signal and the availability of valid data on the data pins (DQ). Therefore, the latency between column accesses (CAS), plays an important role in the performance of the memory. The lower the latency, the better the performance. However, the memory modules must be capable of supporting low latency settings.

tRCD
There is a delay from when a row is activated to when the cell (or column) is activated via the CAS signal and data can be written to or read from a memory cell. This delay is called tRCD. When memory is accessed sequentially, the row is already active and tRCD will not have much impact. However, if memory is not accessed in a linear fashion, the current active row must be deactivated and then a new row selected/activated. It is this example where low tRCD's can improve performance. However, like any other memory timing, putting this too low for the module can result in instability.

tRP
tRP is the time required to terminate one Row access and begin the next row access. Another way to look at this it that tRP is the delay required between deactivating the current row and selecting the next row. Therefore, in conjunction with tRCD, the time required (or clock cycles required) to switch banks (or rows) and select the next cell for either reading, writing or refreshing is a combination of tRP and tRCD.

tRAS
Memory architecture is like a spreadsheet with row upon row and column upon column with each row being 1 bank. In order for the CPU to access memory, it must first determine which Row or Bank in the memory that is to be accessed and activate that row via the RAS signal. Once activated, the row can be accessed over and over until the data is exhausted. This is why tRAS has little effect on overall system performance but could impact system stability if set incorrectly.

Command Rate
The Command Rate is the time needed between the chip select signal and when commands can be issued to the RAM module IC. 

Share this content
Twitter Facebook Reddit WhatsApp Email Print