SK Hynix has revealed that it is the first company to develop a 12-layer HBM3 product featuring 24 GB of memory capacity, making it the largest in the industry.
Currently, the performance evaluation of these samples is being conducted by customers. HBM, or High Bandwidth Memory, is a high-value and high-performance memory solution that stacks multiple DRAM chips vertically to significantly enhance data processing speeds compared to traditional DRAM offerings. HBM3 is the fourth generation in this line of products, following HBM, HBM2, and HBM2E.
SK Hynix stated that they have successfully developed the 24 GB package product, increasing memory capacity by 50% compared to its predecessor. This achievement comes after the company initiated mass production of the world's first HBM3 in June of the previous year. In response to the increasing demand for high-quality memory products, driven by the AI-powered chatbot sector, SK Hynix plans to introduce these new products to the market in the latter half of the year.
To enhance process efficiency and performance stability in their latest product, SK Hynix engineers employed Advanced Mass Reflow Molded Underfill (MR-MUF) technology. Additionally, the adoption of Through Silicon Via (TSV) technology has enabled a 40% reduction in the thickness of individual DRAM chips, resulting in a stack height that matches the 16 GB product.