Samsung To Show 280-layer 3D QLC NAND Flash, 32 Gbit DDR5-8000 Memory Chips at IEEE-SSCC

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Samsung will unveil a 280-layer 3D QLC NAND flash memory that boasts a 1 Tb capacity. This new flash memory is expected to enhance the performance and storage capacity of SSDs and smartphones, featuring an areal density of 28.5 Gb/mm² and a transfer rate of 3.2 GB/s. This represents an improvement over the current top 3D NAND flash memories used in leading NVMe SSDs, which have a maximum transfer speed of 2.4 GB/s.

Additionally, Samsung is set to introduce a next-generation DDR5 memory chip with a data rate potential of DDR5-8000 and a 32 Gbit density, equivalent to 4 GB. This development enables the production of 32 GB single-rank PC-DIMMs. The chip utilizes a symmetric-mosaic DRAM cell architecture and is produced using Samsung's 5th generation 10 nm class process technology specifically tailored for DRAM products.

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This DDR5 innovation allows for the manufacturing of 32 GB and 48 GB DIMMs at DDR5-8000 speeds in single-rank configurations. It also supports 64 GB and 96 GB DIMMs in dual-rank configurations, assuming the platform can support DDR5-8000 in dual-rank mode, thereby expanding the potential for high-capacity, high-speed memory solutions in computing platforms.

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