Samsung is set to release its 9th Generation V-NAND technology in May 2024, featuring a 290-layer 3D NAND flash memory, according to a report by the Korean publication Hankyung. This new generation represents an advancement from the 236-layer 8th Generation V-NAND introduced in 2022. The increase in layers has been achieved through enhanced flash layer stacking techniques, which involve creating additional memory holes within each layer to improve vertical stacking density. While this technique reduces data density per wafer, it results in a net gain in overall layer count.
Furthermore, plans are already in place for the next iteration, with Samsung aiming for an early 2025 launch of the 10th Generation V-NAND. This future technology is expected to feature an unprecedented 430 layers of 3D NAND flash, marking a significant leap of 140 layers from the 9th Generation. This development is part of Samsung's strategy to remain competitive with industry leaders such as Kioxia, SK Hynix, Micron Technology, and YMTC, who are all pursuing the long-term goal of achieving a 1000-layer 3D NAND flash by 2030.
