Furthermore, plans are already in place for the next iteration, with Samsung aiming for an early 2025 launch of the 10th Generation V-NAND. This future technology is expected to feature an unprecedented 430 layers of 3D NAND flash, marking a significant leap of 140 layers from the 9th Generation. This development is part of Samsung's strategy to remain competitive with industry leaders such as Kioxia, SK Hynix, Micron Technology, and YMTC, who are all pursuing the long-term goal of achieving a 1000-layer 3D NAND flash by 2030.
Sources: Hankyung, Wccftech, TPU