This translates to a total memory capacity of 216 GB across the H200's 6144-bit HBM3E interface. Specific DRAM speeds for the Samsung 12H HBM3E in the H200 configuration have not been disclosed by either Samsung or NVIDIA.

In anticipation of NVIDIA's release of its next-generation AI chips, the H200 and B100, in the first half of the year, this presentation at GTC 2024 is expected to solidify Samsung's position as a key HBM3E supplier for NVIDIA. Last month, Samsung announced the development of its 36GB HBM3E 12-tier memory product, a first-of-its-kind reveal to the public. The company aims to start mass production of this memory product within the first half of the year, with the H200 and B100 AI chips from NVIDIA slated to incorporate this technology. Samsung has already provided NVIDIA with product samples and initiated the verification process.

The HBM market is witnessing intensified competition, with Samsung Electronics and SK hynix currently commanding over 90% market share. However, Micron Technology, an American firm, is rapidly gaining ground in this sector. Alongside Samsung, SK hynix will also present its HBM3 and HBM3E memory technologies at the GTC 2024, while Micron Technology plans to introduce its 24GB HBM3E 8-tier product, designed for use in NVIDIA’s H200 chip.