Samsung Initiates Mass Production of Industry-Leading 9th-Generation 1Tb TLC V-NAND

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Samsung has commenced mass production of its 9th-generation vertical NAND (V-NAND), featuring one-terabit (Tb) triple-level cell (TLC) technology. This development marks a significant milestone as it represents the industry's first mass production of 9th-generation V-NAND, highlighting Samsung's continued advancement in memory technology. SungHoi Hur, Head of Flash Product & Technology at Samsung Electronics, highlighted the technological enhancements in the new V-NAND. These include innovations aimed at reducing cell interference and extending cell life, thus improving both product quality and reliability. By eliminating unnecessary structural elements, Samsung has also managed to decrease the planar area of the memory cells significantly.

The company has achieved approximately a 50% increase in bit density over the previous 8th-generation V-NAND, facilitated by the smallest cell size yet and the thinnest mold in the industry. Samsung's proprietary "channel hole etching" technology, which enables the drilling of cell layers in a double-stack structure, is critical in this advancement, allowing for higher layer counts and more efficient fabrication.

The 9th-generation V-NAND also introduces the Toggle 5.1 NAND flash interface, which enhances data transfer speeds by 33% to 3.2 gigabits-per-second (Gbps). This interface, combined with planned support for PCIe 5.0, aims to bolster Samsung's presence in the high-performance solid-state drive (SSD) market. In line with global sustainability goals, the new V-NAND design improves power efficiency by 10% over previous generations. This advancement aligns with growing consumer demand for reduced energy consumption and lower carbon emissions. Samsung's production of the 1Tb TLC V-NAND commenced this month, with a quad-level cell (QLC) variant expected to follow in the latter half of the year.


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