Micron Technology, headquartered in Idaho, USA, announced on February 26, 2024, the commencement of mass production for the cutting-edge HBM3E solution. This advancement offers energy efficiency and ultra-high-speed capabilities. The 24GB HBM3E, featuring 8 layers, achieves a pin speed of 9.2Gbps, delivering a memory bandwidth exceeding 1.2TB/s. This facilitates rapid data access crucial for AI accelerators, supercomputers, and data centers. The product will integrate into the NVIDIA H200 Tensor Core GPU, slated for shipment in Q2 2024.
Micron's HBM3E boasts up to 30% lower power consumption compared to competitors, optimizing throughput and reducing data center operational costs. Additionally, samples of the 36GB HBM3E with 12 layers, also surpassing 1.2TB/s performance, are set to be shipped in March.
For more details, refer to the press release: Micron Commences Volume Production Industry-Leading HBM3E.
