Team Group MP33 NVMe 512 GB SSD Review

Memory (DDR4/DDR5) and Storage (SSD/NVMe) 368 Page 1 of 1 Published by

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Sorry, but for the same price i can get s nvme (phison E12 controller) doing 3000/2000 MBs for R/W, 340K iops and 780 TBW, almost doubling the numbers vs the TG MP33, the only advantage would be the 5y warranty.
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fry178:

Sorry, but for the same price i can get s nvme (phison E12 controller) doing 3000/2000 MBs for R/W, 340K iops and 780 TBW, almost doubling the numbers vs the TG MP33, and the only advantage would be the 5y warranty.
About same what I get with an addlink S70, same price
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You are wrong, from what i see the 128GB model is the best option in the market today with 1000TBW. Buy while it lasts. 😉
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128 GB: up to 1,500 MB / s in reading and up to 500 MB/s in sequential writing. Up to 90 K random read IOPS and 100 K IOPS in random write. The maximum life of your NAND Flash memory cells is 1000 TBW. 256 GB : up to 1,600 MB/s in reading and up to 1,000 MB / s in sequential writing. Up to 160 K random read IOPS and 200 K IOPS in random write. The maximum life of your NAND Flash memory cells is 200 TBW. 512 GB : up to 1,700 MB/s in reading and up to 1,400 MB / s in sequential writing. Up to 220 K random read IOPS and 200 K IOPS in random write. The duration of your NAND Flash memory cells is 400 TBW. 1 TB : up to 1,800 MB/s in reading and up to 1,500 MB / s in sequential writing. Up to 220 K IOPS in reading and 200 K IOPS in random writing. Its duration is estimated at around 600 TBW 2 TB : up to 1,800 MB/s in reading and up to 1,500 MB / s in sequential writing. Up to 220 K IOPS in reading and 200 K IOPS in random writing. Its duration is estimated at around 1,000 TBW. So, how to say, my glasses are perfectly clean. Comment after reading the article, not before. I guess Hilbert should join the discussion.
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Aro9:

128 GB: up to 1,500 MB / s in reading and up to 500 MB/s in sequential writing. Up to 90 K random read IOPS and 100 K IOPS in random write. The maximum life of your NAND Flash memory cells is 1000 TBW. 256 GB : up to 1,600 MB/s in reading and up to 1,000 MB / s in sequential writing. Up to 160 K random read IOPS and 200 K IOPS in random write. The maximum life of your NAND Flash memory cells is 200 TBW. 512 GB : up to 1,700 MB/s in reading and up to 1,400 MB / s in sequential writing. Up to 220 K random read IOPS and 200 K IOPS in random write. The duration of your NAND Flash memory cells is 400 TBW. 1 TB : up to 1,800 MB/s in reading and up to 1,500 MB / s in sequential writing. Up to 220 K IOPS in reading and 200 K IOPS in random writing. Its duration is estimated at around 600 TBW 2 TB : up to 1,800 MB/s in reading and up to 1,500 MB / s in sequential writing. Up to 220 K IOPS in reading and 200 K IOPS in random writing. Its duration is estimated at around 1,000 TBW. So, how to say, my glasses are perfectly clean. Comment after reading the article, not before. I guess Hilbert should join the discussion.
Pretty sure its a typo. Makes zero sense for 128gb to have 1000 TBW while the 256gb is 200 TBW. The larger the capacity, the greater the life span. Thats always been the case.
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Yes, it was a typo (corrected now). On the second page it was already ok (100 TBW). Thanks for spotting that 😎