Samsung Introduces the 845DC EVO Solid State Drive for Servers

Samsung introduced the Samsung 845DC EVO Solid State Drives (SSD), adding a new SSD line designed for use in data centers. The Samsung 845DC EVO has been designed and built for sustained performance, low latency and high endurance in read-intensive data center applications, such as video/content streaming, application and web servers. 

Utilizing Samsung's advanced 10-nanometer class 3-bit NAND flash memory, the firmware and controller of the Samsung 845DC EVO are based on the Samsung PM853T SSD, which has been tested and qualified for system compatibility by leading server system manufacturers. The 845DC EVO SSD is ideal for small and medium business system integration and data center use, while the PM853T provides a customized solution for OEM server manufacturers and large data centers.

Available in 240 gigabyte (GB), 480 GB and 960 GB storage capacities, the Samsung 845DC EVO features high reliability and endurance. It delivers sequential read speeds of up to 530 megabytes per second (MB/s) and 87,000 IOPS for random reads, while offering a warranty of up to 600 TBW (total bytes written).

Samsung 845DC EVO's active power consumption is approximately 4 watts, which is as little as 25 percent that of equivalent HDD technology for the data center. 

The 845DC EVO from Samsung will be available in the US and other select global markets later this month.

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The company isn't calling its memory TLC. Rather, the 845DC EVO sports 19 nm Toggle 3-bit MLC NAND. Samsung avoids the issue of write endurance by aiming its latest SSD at environments where reads are most prominent. This class of storage is becoming increasingly crowded; perhaps the most notable recent addition was Intel's SSD DC S3500.

The drive's specifications are competitive with other SSDs in the read-oriented space. More interesting, perhaps, is that we're being led to believe that the 845DC EVO beats Intel's potent SSD DC S3500 in almost every category, including endurance (despite the triple-level-cell memory). Intel only claims 140 TBW for its 240 GB model and 275 TBW for the 480 GB version.