Samsung 960 EVO M.2 1TB NVMe SSD review

Memory (DDR4/DDR5) and Storage (SSD/NVMe) 368 Page 5 of 20 Published by

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Product Showcase

Product Showcase

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The PCB with its NAND flash ICs and controller are covered by a sticker. We carefully peeled it off to have a closer look at the ICs. There you have it, this M.2 NGFF-2280 1TB SSD has just four 3bit written MLC NAND ICs (commonly referred to as Triple Level Cell (TLC). Samsung refers to this technology as 3-bit MLC). And yes, the biggest benefit of the ability to stack memory cells vertically.
  

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The backside is clean/clear from anything, you will not find any components there. 

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So this is the new Polaris controller, a five-core, eight-channel chip. This updated controller replaces the UBX controller used in the popular PM951/950 series. Just below the controller you can spot the DRAM cache chip. The 250 and 500B model will get a 512MB DRAM cache, the 1TB version a 1 GB cache. 
  

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And to the lower side, one of the two NAND ICs. 48-layer (3D) Vertical NAND. This is the benefit from vertical stacked Nand flash memory and Triple cell written Nand, you get to do more with less. 
  

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I'll say it again as it is significant, two NAND ICs responsible for 1 Terabyte of storage. Very impressive to see on that small 8cm long M.2. PCB.

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