NEO Semiconductor, a US-based company, has introduced groundbreaking 3D X-DRAM technology that streamlines and economizes the three-dimensional production of DRAM memory cells. 

This  innovation offers the potential for significantly increasing memory cell density in chips within a short timeframe. "3D X-DRAM™ is poised to be the ultimate growth catalyst for the semiconductor sector," stated Andy Hsu, NEO Semiconductor's Founder and CEO, who holds over 120 US patents. "NEO is emerging as a clear frontrunner in the 3D DRAM market, with our invention offering simplicity and cost-effective manufacturing and scaling compared to current solutions. The industry can anticipate 8X density and capacity enhancements per decade with 3D X-DRAM™."

Using techniques similar to 3D NAND memory, the technology necessitates minimal equipment modifications, requiring just a single new mask during the etching process. NEO Semiconductor projects that 3D X-DRAM may soon replace traditional DRAM production methods. The achieved density of 128 Gbit per memory cell across 230 layers is eight times higher than conventional 2D DRAM cells, with the potential to reach 1 Tbit within the next decade. NEO Semiconductor's 3D X-DRAM™, a pioneering 3D NAND-like DRAM cell array structure, is based on capacitor-less floating body cell technology. It can be manufactured using existing 3D NAND-like processes, needing only one mask to define the bit line holes and form the cell structure within them. This cell structure simplifies process steps, providing a fast, high-density, cost-effective, and high-yield solution.

According to NEO's estimates, 3D X-DRAM™ technology can achieve 128 Gb density with 230 layers, representing an 8-fold increase in today's DRAM density. A concerted industry effort is underway to incorporate 3D technology into DRAM. Adopting 3D X-DRAM™ takes advantage of the mature 3D NAND process alone, unlike many alternatives for transitioning DRAM to 3D proposed in academic papers and explored by the memory industry.

3D X-DRAM Technology to Significantly Boost Memory Chip Capacity Rapidly