Samsung's Upcoming V-NAND Memory Improves Higher Capacity and Performance

The performance and bit density of solid-state storage devices will be enhanced by Samsung's 8th Generation V-NAND memory, which will feature over 200 layers.

In 2013, Samsung's 24-layer V-NAND flash memory was light-years ahead of the competition. Reports from Business Korea suggest that V-creator NAND's is gearing up for large-scale production of 236-layer 3D NAND flash memory. 

Samsung developed its first 200-layer V-NAND memory samples in mid-2021, so it should now have enough experience to begin commercial manufacturing. The storage capacity of Samsung's 8th Gen V-NAND chips is a mystery now. The company's next-gen NAND memory, which we're confident will have faster interface speeds and other performance attributes to enable the greatest SSDs, has our full confidence. To manufacture solid-state drives (SSDs) for PCIe Gen5 computers, laptops, and UFS 3.1 and 4.0 smartphones, Samsung need fast NAND components. We anticipate that Samsung's V8-NAND will be quicker than their V7-NAND, which supports interface rates of up to 2.0 GT/s.

Scaling flash memory by adding NAND layers is a complex process. New charge-storing materials are needed as NAND layers (and NAND cells) continue to get thinner. Since etching hundreds of layers is challenging (and perhaps not economically practical), string stacking is the only option for 3D NAND manufacturers. Samsung hasn't employed string stacking with its 176-layer V7-NAND, but it's unclear if it will come with 236-layer V8-NAND.