UFS 3.1 Embedded Flash Memory Devices With Quad-Level Cell Kioxia (QLC)

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Embedded flash memory devices that use Kioxia's new 4-bit per cell quad-level-cell (QLC) technology have been released. The Universal Flash Storage (UFS) Ver. 3.1 embedded flash memory devices are available now. Kioxia's QLC technology makes it possible to get the highest density in a single package for applications like cutting-edge smartphones.



Kioxia's UFS proof of concept (PoC) device is a 512-gigabyte prototype that utilizes the company's 1 terabit (128 gigabyte) BiCS FLASH 3D flash memory with QLC technology, and is now sampling to OEM customers. The PoC device is designed to meet the increasing performance and density requirements of mobile applications driven by higher resolution images, 5G networks, 4K plus video and the like.

The samples are POC devices under development and have some feature limitations. Furthermore, specifications of the devices are subject to change without prior notice. In every mention of a Kioxia product: Product density is identified based on the density of memory chip(s) within the Product, not the amount of memory capacity available for data storage by the end user. Consumer-usable capacity will be less due to overhead data areas, formatting, bad blocks, and other constraints, and may also vary based on the host device and application. For details, please refer to applicable product specifications.

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