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Guru3D.com » News » Samsung Starts Mass Production 2nd Generation 10nm FinFET Process Technology

Samsung Starts Mass Production 2nd Generation 10nm FinFET Process Technology

by Hilbert Hagedoorn on: 11/29/2017 09:47 AM | source: | 3 comment(s)
Samsung Starts Mass Production 2nd Generation 10nm FinFET Process Technology

Samsung today announced that its Foundry Business has commenced mass production of System-on-Chip (SoC) products built on its second generation 10-nanometer (nm) FinFET process technology, 10LPP (Low Power Plus).

10LPP process technology allows up to 10-percent higher performance or 15-percent lower power consumption compared to its first generation 10nm process technology, 10LPE (Low Power Early). As this process is derived from the already proven 10LPE technology, it offers competitive advantages by greatly reducing turn-around time from development to mass production and by providing significantly higher initial manufacturing yield.

SoCs designed with 10LPP process technology will be used in digital devices scheduled to launch early next year and are expected to become more widely available throughout the year.

“We will be able to better serve our customers through the migration from 10LPE to 10LPP with improved performance and higher initial yield,” said Ryan Lee, vice president of Foundry Marketing at Samsung Electronics. “Samsung with its long-living 10nm process strategy will continue to work on the evolution of 10nm technology down to 8LPP to offer customers distinct competitive advantages for a wide range of applications.”

Samsung also announced that its newest manufacturing line, S3, located in Hwaseong, Korea, is ready to ramp up production of process technologies including 10nm and below. S3 is the third fab of Samsung’s Foundry Business, following S1 in Giheung, Korea and S2 in Austin, USA. Samsung’s 7nm FinFET process technology with EUV (Extreme Ultra Violet) will also be mass produced at S3.



Samsung Starts Mass Production 2nd Generation 10nm FinFET Process Technology




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schmidtbag
Senior Member



Posts: 7246
Joined: 2012-11-10

#5496504 Posted on: 11/29/2017 05:14 PM
Just for clarification, does LPP mean it takes less power to operate the silicon, or to manufacture them? I'm guessing it's the former, but the phrasing is slightly ambiguous.

Silva
Senior Member



Posts: 1971
Joined: 2013-06-04

#5496546 Posted on: 11/29/2017 07:52 PM
Just for clarification, does LPP mean it takes less power to operate the silicon, or to manufacture them? I'm guessing it's the former, but the phrasing is slightly ambiguous.


They mention 10% performance uplift or 15% lower power consumption. I'm sure the manufacturing isn't thrown in the equation.
I just wish they would make another fab already, the DDR prices keep skyrocketing and they put almost everything they make on flagship phones...

schmidtbag
Senior Member



Posts: 7246
Joined: 2012-11-10

#5496548 Posted on: 11/29/2017 08:04 PM
They mention 10% performance uplift or 15% lower power consumption. I'm sure the manufacturing isn't thrown in the equation.

Right, but the subject is the manufacturing process, which is where the ambiguity comes in. In the same paragraph, the technology is also associated with turn-around time and yield. The quote saying "improved performance and higher initial yield" seems to suggest those descriptions apply to the same thing, and nobody talks about yield when it comes to processor performance, so I'm led to believe they are only talking about the manufacturing. But then, quotes like "10-percent higher performance or 15-percent lower power consumption" lead me to believe they're also talking about processor performance (not that they can't be associated with a factory, either)...

Regardless, it's good news.

I just wish they would make another fab already, the DDR prices keep skyrocketing and they put almost everything they make on flagship phones...

They are, as stated in the last paragraph. Besides, considering LPP is supposed to improve yield and time, this ought to help reduce DDR prices in the meantime.

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