Samsung Launches 800GB Z-SSD for HPC and AI Systems

by Hilbert Hagedoorn on: 01/30/2018 08:57 AM | source: | 3 comment(s)

Samsung Electronics, the world leader in advanced memory technology, today announced that it has launched an 800-gigabyte (GB) solid state storage drive-the SZ985 Z-SSD, for the most advanced enterprise applications including supercomputing for AI analysis.

Developed in 2017, the new 800 GB Z-SSD provides the most efficient storage solution for high-speed cache data and log data processing, as well as other enterprise storage applications that are being designed to meet rapidly growing demand within the AI, big data and IoT markets.

"With our leading-edge 800 GB Z-SSD, we expect to contribute significantly to market introductions of next-generation supercomputing systems in the near future, enabling improved IT investment efficiency and exceptional performance," said Jinman Han, senior vice president, Memory Product Planning & Application Engineering at Samsung Electronics. "We will continue to develop next-generation Z-SSDs with higher density and greater product competitiveness, in order to lead the industry in accelerating growth of the premium SSD market."

The new single port, four-lane Z-SSD features Z-NAND chips that provide 10 times higher cell read performance than 3-bit V-NAND chips, along with 1.5 GB LPDDR4 DRAM and a high performance controller. Armed with some of the industry's most advanced components, the 800 GB Z-SSD features 1.7 times faster random read performance at 750K IOPS, and five times less write latency - at 16 microseconds, compared to an NVMe SSD PM963, which is based on 3-bit V-NAND chips. The Z-SSD also delivers a random write speed of up to 170K IOPS.

Due to its high reliability, the 800 GB Z-SSD guarantees up to 30 drive writes per day (DWPD) for five years, or a total of 42 petabytes. That translates into storing a total of about 8.4 million 5GB-equivalent full-HD movies during a five-year period. The reliability of the new Z-SSD is further underscored by a mean time between failures (MTBF) of two million hours.

Samsung will introduce its new Z-SSD in 800 GB and 240 GB versions, as well as related technologies at ISSCC 2018 (International Solid-State Circuits Conference), which will be held February 11-15 in San Francisco.

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nizzen
Senior Member

Posts: 869
Joined: 2005-08-05

#5515373 Posted on: 01/30/2018 09:06 AM

Does it beat Intel Optane @ 4k random read QD=1?

If not, we don't want it :p

wavetrex
Senior Member

Posts: 772
Joined: 2008-07-16

#5515394 Posted on: 01/30/2018 10:24 AM

Electric storage technology is making leaps and bounds every year !

When we think about it, just 10 years back 300-500 iops for a high-performance hard-disk (at that time) was the best we could get.
And now going over 750.000 in a single unit. Absolutely unreal !

Fast forward 10 years ...
I can imagine 2030 could bring hundreds of terabytes of data in a device the size of an M.2 card, with near-instant access to any of it.

Databases could be accessed like we are accessing our in-brain memories... basically, instantly.
Perhaps this is what's need to make strong AI really possible.

The Reeferman
Member

Posts: 92
Joined: 2013-11-10

#5515658 Posted on: 01/31/2018 02:56 AM

5x less write latency at 16 microseconds, so normally it is 80 millionth of a second, so no noticeable difference for a human. But might be interesting for super computers and AI calculations as they say. And that's what it is marketed for, curious how this SSD might affect such calculations performance.

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