New Technology Will Quadruple SSD Performance

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A Japanese research team developed a technology to drastically improve the writing speed, power efficiency and cycling capability (product life) of a storage device based on NAND flash memory (SSD). The team is led by Ken Takeuchi, professor at the Department of Electrical, Electronic and Communication Engineering, Faculty of Science and Engineering of Chuo University. The development was announced at 2014 IEEE International Memory Workshop (IMW), an international academic conference on semiconductor memory technologies, which took place from May 18 to 21, 2014, in Taipei. The title of the thesis is "NAND Flash Aware Data Management System for High-Speed SSDs by Garbage Collection Overhead Suppression."



With NAND flash memory, it is not possible to overwrite data on the same memory area, making it necessary to write data on a different area and, then, invalidate the old area. As a result, data is fragmented, increasing invalid area and decreasing storage capacity. Therefore, NAND flash memories carry out "garbage collection," which rearranges fragmented data in a continuous way and erases blocks of invalid area. This process takes 100ms or longer, drastically decreasing the writing speed of SSD.


New Technology Will Quadruple SSD Performance


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