Specifications and features
Specifications and features
The sample of HP FX900 that has arrived for testing is the 1 TB version of the drive. It is an NVMe 1.4, PCIe 4x4 drive, so that you can expect outstanding performance. Unleashed by the PCIe 4.0 ready AMD B550/X570 chipset and Intel Rocket Lake-S / Z590, the SSD reaches up to an advertised 7000 MB/sec sequential read – fourteen times the performance of many SATA SSDs and seventy times faster than some hard disk drives. The performance stems from the hugely increased bandwidth of PCIe 4.0 (PCI-Express Generation 4), a feature that will be made available to customers for the first time as part of the AMD X570 chipset and 3rd Generation AMD Ryzen Desktop Processors. Easily fitting into a PCIe 4.0 x4 M.2 slot, the NVMe interface has been bumped upwards to the new 1.4 protocol, and high-density TLC NAND combined with a fast controller to enable a new level of single-drive SSD performance. It boasts staggering numbers. The controller is Innogrit IG5220 without a DRAM buffer. The series is fitted with 3D TLC (Triple-level cell) NAND flash memory. It allows HP to offer a bigger storage capacity at a lower price. But you’ll see how it will be in reality later in the review.
Innogrit IG5220 controller
HP FX900 has used one of the Innogrit RainierQX/Q family members, which targets different applications: IG5220 for DRAM-less low-cost client solutions and IG5221 for high-end client applications with DRAM. The IG5220/IG5221, implemented in an advanced 12nm FinFET CMOS process, is an industry-leading PCIe Gen4 x4, NVMe 1.4 SSD controller with a capacity size up to 4TB/8TB. The IG5220 features an enhanced DRAM-less architecture with the full support of the HMB function. The IG5220/IG5221 is built with the highest-level security with multiple data encryption and protection schemes, including SM2/3/4, AES, SHA, RSA, ECC, CRC, RAID, and end-to-end data protection.
Product Features (1 TB version):
- Appearance size: M.2
- Color: black
- Interface: PCIe Gen 4*4, NVMe
- Storage capacity: 256 GB/ 512 GB/ 1TB / 2TB
- NAND flash memory: 3D TLC (Tri-Level Cell)
- Main controller: Innogrit IG5220
- Maximum continuous read and write speed:
256 GB / 4600, 1700 MB/s
512 GB / 4900, 3300 MB/s
1 TB / 5000, 4800 MB/s
2 TB / 5000, 4800 MB/s - Maximum read/write operations per second (4K files):
256 GB / 281 000, 325 000 IOPS
512 GB / 545 000, 501 000 IOPS
1 TB / 828 000, 663 000 IOPS
2 TB / 820 000, 645 000 IOPS
- TBW:
256 GB / 100 TB
512 GB / 200 TB
1 TB / 400 TB
2 TB / 800 TB
- Mean Time Between Failure (MTBF): 1,000,000 hours
- Operating temperature: 0 ℃ to 70 ℃ (32 ℉ to 158 ℉)
- Warranty: 5 years of warranty limited by TBW* + technical support