Intel QLC based consumer SSD late this year, also Business SSDs up-to 20TB

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We've mentioned and discussed QLC NAND Flash memory a number of times already with developments from Toshiba, and Micron. Micron's NAND ends up in Intel SSDs and they just announced that both consumer and business products based on QLC will hit the market later this year.



Intel has two buns in the even, one aimed at the consumer market and a one for the business market. While the specifications of the consumer SSDs are not yet known we do expect it'll be the 'Intel SSD 660p', a low-end m.2-SSD with PCI-express x2 interface and a maximum capacity of two terabytes.  Earlier leaks indicated these M.2 SSDs with PCIe 3.0 x2 to run up to 1,800 MB/s in storage capacities of 512 GB, 1 TB and 2 TB. Where Intel will be rattling some cages is the business product, they are developing a business SSD series on the 2.5-inch form factor that uses the u.2 nvme interface. This series is said to run up-towards a maximum of 20 terabytes of flash memory storage capacity! The new products should become available in the second half of this year.

Basically, this type (QLC) of NAND thus writes 4 bits per cell. Adding more bits per cell also has an effect on the life-span of the NAND cell, and thus that brings down the number of times it can be written. Much like TLC (Triple-level cell), many new technologies like error-correction mechanisms and wearing have increased the life-span of the respective SSDs. For example, a 500 GB TLC based SSD can quite easily manage a 300TB written before NAND cells start to die off. TLC has roughly a 1000 PE cycles, and that is the claim for QLC as well, a 1000 PE cycles. 

On 64-layer 4bits/cell NAND technology, Micron is achieving 33 percent higher array density compared to TLC, which enables them to produce the first commercially available 1 terabit die in the history of semiconductors.



“Commercialization of 1Tb 4bits/cell is a big milestone in NVM history and is made possible by numerous innovations in technology and design that further extend the capability of our Floating Gate 3D NAND technology,” said RV Giridhar, Intel vice president, Non-Volatile Memory Technology Development. “The move to 4bits/cell enables compelling new operating points for density and cost in Datacenter and Client storage.”


Micron wafer with 64GB QLC flash chips

Intel QLC based consumer SSD late this year, also Business SSDs up-to 20TB


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