140+ layer Vertically Stacked Nand Mentioned in 2021 roadmap

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So currently, the latest tech makes it possible to stack 64-layers of cells into a NAND chip, which let's be honest here is already a huge achievement. Well, by 2021 that number will have increased towards 140 layers or even more.



The news comes from a roadmap published by Applied Materials that was presented during the International Memory Workshop in Kyoto, Japan reports myce. It's not just layered, the layers will also become thinner. The end goal is of course to create more storage volume per chips, which has been the trend for years now. A stacked NAND is now roughly 55nm with all layers, by 2021 this should be about 45 nm.



Toshiba and Western Digital are already working hard on their 96-layer BiCS 3D NAND, which should sample in the next 12 months actually. Samsung 5th gen 3D NAND also would reach 96 layers this year. In 2020 you can expect something in the trend of 120 layers and by 2021 the number of layers will increase to about 140. BTW since we're dealing in bits and bytes, this should all be mathematical increments of 8, thus 64, 96, 128, 144 and so on.

Applied Material’s roadmap doesn’t state anything about the actual data capacity increase of the technology improvements. However, Samsung previously announced it aims for chips with a capacity of 1 terabit. The increased data density is possible by using four-bits-per-cell (QLC) and 96 layers. Currently, 64 layer technology provides chips with 512 gigabits.

The roadmap originates from Applied Materials, an American company that supplies equipment, services and software for semiconductor chip manufacturing.

140+ layer Vertically Stacked Nand Mentioned in 2021 roadmap


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